MARKET-LEADING SIZE, WEIGHT, POWER, AND COST (SWAP-C) RF POWER AMPLIFIERS
We maximize your RF capability and readiness with engineering solutions built around your requirements.
NuWaves designs custom RF power amplifiers to meet specific requirements. Common targets include RF output power, linearity (EVM), and size, weight, power consumption, and cost (SWaP-C). We can develop a new design or tailor an existing one.
Our bidirectional amplifier designs extend the range of half-duplex systems. For full-duplex systems, we offer bidirectional amplifier designs with integrated filtering, so your links run without disruption or interference. Whatever the need, NuWaves offers a full spectrum of RF solutions.
- Fast Tx/Rx Switching
- Low SWaP
- Multi-Octave Operation
- High Efficiency
- Low & Band Pass Embedded Filtering
- High Linearity
- Custom Designed MMICs
- High Ruggedization
- Ultra Low Noise Figure for Data Link
- High Output Power
- VHF thru Ka-Band Designs
- GaN, GaAs & LDMOS Transistors
RF AND MICROWAVE POWER AMPLIFIER DESIGN EXPERIENCE
Custom Designed MMIC Power Amplifier Design for High Efficiency, High Linearity C-Band Operation
NuWaves researched, designed, and developed a high-efficiency, high-linearity C-band power amplifier for unmanned aircraft systems (UAS). The design is a custom Gallium Nitride (GaN) MMIC. It combines analog predistortion linearization with a Doherty amplifier topology. The result is very efficient operation, especially with amplitude-modulated waveforms such as 802.11, 802.16, and LTE.
High Power Amplifier Design for Commercial Cell Base Station Communications
This robust power amplifier transmits both digital and analog modulation formats. The high-gain design includes techniques that make it tolerant of modulation mismatch. It delivers high RF output power, high gain, and broadband operation. It was successfully integrated into legacy base station systems.
High RF Output Power Amplifier Designs
The NuPower™ S100A01 S-Band Power Amplifier is a small, ultra-high-power solid-state amplifier designed for CW operation. It delivers a minimum of 100 watts of RF power from 2300 MHz to 2500 MHz. Typical uses include boosting data links and transmitters for communications range extension and electronic warfare, such as electronic attack.
The S100A01 is built on Gallium Nitride (GaN) device technology. Its 29 cubic inch, 22.6 ounce enclosure and 45% DC power efficiency make it a strong option for SWaP-constrained RF telemetry and military communication systems.
Power Amplifier Linearizer Module (PALM)
The Power Amplifier Linearizer Module (PALM) is an applique that improves the linearity of a high-efficiency power amplifier. It reduces the power back-off needed for amplitude-modulated waveforms such as OFDM and QAM. Its adaptive correction needs no manual adjustment. It holds linearity steady across temperature drift, output power changes, and other impairments.
PALM is available from VHF through 4 GHz. It works with any amplifier topology (class A, AB, or Doherty) and any device technology (GaN, GaAs, or LDMOS). Typical improvement in adjacent channel power rejection (shoulder levels) is 12 to 20 dB, depending on modulation and signal bandwidth.
PALM consumes less than one watt, so it adds little overhead to battery-operated systems. At 2.50” x 1.75” x 0.75”, it fits easily into compact amplifier designs.
RF AND MICROWAVE BIDIRECTIONAL AMPLIFIER DESIGN EXPERIENCE
Bidirectional amplifier design is a natural extension of our power amplifier and RF circuit work. We offer custom bidirectional amplifier (BDA) design services and COTS BDA products. A BDA pairs with a half-duplex data link transceiver and amplifies in both directions: transmit and receive.
Many of our BDA designs start from proven circuit designs, which lowers development cost. Our AS9100D-certified quality management system helps ensure your key performance parameters are met. Typical targets include DC power efficiency, small and lightweight packaging (SWaP), high linearity (low EVM), low noise figure, or a combination of these.
Linear S-Band Bidirectional Amplifier Design
This small, lightweight, low-SWaP linear BDA extends the range of half-duplex S-band transceivers running amplitude-modulated waveforms such as OFDM, QAM, and DVB-T. It generates 5 watts of linear RF power from 2200 to 2500 MHz with a 10 dB peak-to-average power ratio (PAPR) waveform. The integrated low-noise amplifier provides at least 13 dB of gain in receive mode.
UHF Bidirectional Amplifier
This BDA extends the range of half-duplex transceivers using constant-envelope waveforms, such as PSK- and FSK-based modulations (SOQPSK, GFSK). It generates 10 watts of RF transmit power. It accepts a +5 dBm input and provides 35 dB of transmit gain, at 30% or better power efficiency across most of its range. At 3.8 cubic inches and built on GaN device technology, the NuPower Xtender VHF/UHF BDA module suits broadband RF telemetry.
Miniature C-Band Bidirectional Amplifier
A C-band BDA developed in five months. It measures 3.57” x 2.57” x 0.50”, weighs 2.6 oz, and provides 10 watts of RF output power from 4400 to 5100 MHz.